| Method for processing silicon carbide wafers with relaxed positive curvature |
2023-7-21 |
2023-9-27 |
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| Packages for power electronics |
2023-7-21 |
2023-9-27 |
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| Power semiconductor device with reflowed intermetal dielectric layer |
2023-6-30 |
2023-8-18 |
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| Semiconductor devices having gate resistors with low variation in resistance … |
2023-4-20 |
2023-8-24 |
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| Semiconductor power devices having multiple gate trenches and methods of … |
2023-4-19 |
2023-8-17 |
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| Silicon Carbide Wafers with Relaxed Positive Bow and Related Methods |
2023-4-07 |
2023-8-03 |
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| Power silicon carbide MOSFET device and related method |
2023-3-28 |
2023-6-06 |
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| Power semiconductor devices including a trenched gate and methods of forming … |
2023-3-24 |
2023-7-20 |
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| Support shield structures for trenched semiconductor devices |
2023-3-20 |
2023-9-28 |
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| Bypassed gate transistors having improved stability |
2023-3-15 |
2023-8-10 |
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| Power semiconductor device with shallow conduction region |
2023-3-10 |
2023-9-28 |
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| High power mmic device with bypass-gated transistor |
2023-3-08 |
2023-6-13 |
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| Monolithic microwave integrated circuit with both enhancement-mode and … |
2023-3-03 |
2023-4-27 |
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| Group iii nitride-based monolithic microwave integrated circuits having multi- … |
2023-2-28 |
2023-9-14 |
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| Gate trench power semiconductor devices having improved deep shield connection … |
2023-2-15 |
2023-6-29 |
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| Edge termination structures for semiconductor devices |
2023-2-02 |
2023-6-08 |
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| Semiconductor package with creepage extension structures |
2023-2-01 |
2023-8-17 |
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| Wide bandgap unipolar/bipolar transistor |
2023-1-31 |
2023-8-10 |
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| Integrated power module |
2023-1-31 |
2023-6-01 |
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| Bypassed gate transistors having improved stability |
2023-1-20 |
2023-5-25 |
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| Power Module Having an Elevated Power Plane with an Integrated Signal Board and … |
2023-1-19 |
2023-5-25 |
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| Device design for short-circuit protection of transistors |
2023-1-06 |
2023-5-18 |
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| Group iii nitride high-electron mobility transistors with implanted p-type … |
2023-1-04 |
2023-3-24 |
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| Gallium-nitride high-electron-mobility transistor having p-type layer deeply … |
2022-12-16 |
2023-3-03 |
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| Ipd components having sic substrates and devices and processes implementing the … |
2022-12-16 |
2023-6-22 |
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| Configurable metal – insulator – metal capacitor and devices and processes … |
2022-12-16 |
2023-6-22 |
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| Multi-typed integrated passive device (ipd) components and devices and … |
2022-12-16 |
2023-7-27 |
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| Group iii nitride based depletion mode differential amplifiers and related rf … |
2022-12-01 |
2023-6-15 |
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| High power multilayer module for paralleling power device with low inductance … |
2022-12-01 |
2023-3-03 |
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| Radio frequency transistor amplifier, and other multi-cell transistor with … |
2022-11-24 |
2023-1-20 |
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| Edge termination for power semiconductor devices and related fabrication … |
2022-11-18 |
2023-6-08 |
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| Compact power module |
2022-11-07 |
2023-5-19 |
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| high voltage power module |
2022-10-27 |
2023-1-24 |
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| Transistor with ohmic contacts |
2022-10-20 |
2023-4-27 |
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| Power semiconductor devices including multiple gate bond pads |
2022-10-11 |
2023-4-20 |
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| High reliability semiconductor devices and methods of fabricating the same |
2022-9-26 |
2023-1-19 |
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| Vertical semiconductor device with improved ruggedness |
2022-9-06 |
2022-12-29 |
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| Metal pillar connection topologies in a radio frequency transistor amplifier … |
2022-8-30 |
2023-3-09 |
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| Bypassed gate transistors having improved stability |
2022-8-26 |
2023-4-06 |
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| Improved drain interconnect and/or gate interconnect, and finger structure |
2022-8-25 |
2022-11-09 |
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| Compensation of trapping in field effect transistors |
2022-8-03 |
2023-2-09 |
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| Arrangements of power semiconductor devices for improved thermal performance |
2022-8-03 |
2023-3-02 |
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| Encapsulation stack for improved humidity performance and related fabrication … |
2022-7-29 |
2023-5-16 |
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| Multi-Cavity Package Having Single Metal Flange |
2022-7-19 |
2022-11-03 |
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| Semiconductor device incorporating a substrate recess |
2022-7-11 |
2023-3-23 |
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| Semiconductor devices having asymmetric integrated lumped gate resistors for … |
2022-7-11 |
2023-1-26 |
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| Gallium nitride high-electron mobility transistors with p-type layers and … |
2022-7-07 |
2022-10-27 |
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| High power multilayer module having low inductance and fast switching for … |
2022-7-07 |
2022-11-03 |
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| High performance semiconductor device |
2022-7-07 |
2023-1-12 |
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| Field effect transistor with stacked unit subcell structure |
2022-6-24 |
2022-10-13 |
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| Rf amplifier devices and methods of manufacturing including modularized designs … |
2022-6-24 |
2022-10-06 |
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| Laminated papermaking belt |
2022-6-23 |
2022-10-13 |
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| High power transistor with interior-fed fingers |
2022-6-07 |
2022-9-22 |
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| Field effect transistor with multiple stepped field plate |
2022-6-07 |
2022-9-22 |
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| Reduced optical absorption for silicon carbide crystalline materials |
2022-6-06 |
2022-12-22 |
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| Trench bottom shielding methods and approaches for trenched semiconductor … |
2022-6-03 |
2022-9-15 |
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| Multilayer encapsulation for humidity robustness and highly accelerated stress … |
2022-6-01 |
2023-1-16 |
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| Integrated passive device (ipd) components and a package and processes … |
2022-5-31 |
2022-12-15 |
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| Power semiconductor die with improved thermal performance |
2022-5-31 |
2022-12-29 |
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| Packaged transistor amplifier with integrated passive device matching structure … |
2022-5-24 |
2022-12-15 |
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| Field effect transistor with modified access regions |
2022-5-20 |
2022-11-24 |
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| Field effect transistor with source-connected field plate |
2022-5-20 |
2022-11-24 |
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| Methods of manufacturing high electron mobility transistors having improved … |
2022-5-18 |
2022-11-24 |
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| Transistors including semiconductor surface modification and related … |
2022-5-18 |
2022-11-24 |
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| Group iii-nitride transistors with back barrier structures and buried p-type … |
2022-5-12 |
2022-11-24 |
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| Integrated passive device (ipd) components and a package and processes … |
2022-5-06 |
2022-11-10 |
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| Base station antennas having aluminum alloy coated mild steel reflector … |
2022-5-05 |
2022-12-08 |
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| Rf amplifiers having shielded transmission line structures |
2022-5-05 |
2022-8-18 |
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| Output-integrated transistor amplifier device packages incorporating internal … |
2022-5-02 |
2022-11-10 |
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| Power module |
2022-4-21 |
2022-10-27 |
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| Power semiconductor devices including multiple gate bond pads |
2022-4-04 |
2023-4-20 |
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| Transistor with bypassed gate structure |
2022-3-31 |
2022-5-26 |
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| Systems and processes for increasing semiconductor device reliability |
2022-3-24 |
2022-7-07 |
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| Support shield structures for trenched semiconductor devices |
2022-3-24 |
2023-9-28 |
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| Methods for dicing semiconductor wafers and semiconductor devices made by the … |
2022-3-23 |
2022-7-07 |
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| Methods for pillar connection on frontside and passive device integration on … |
2022-3-21 |
2022-6-30 |
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| Field effect transistor with selective channel layer doping |
2022-3-18 |
2022-11-24 |
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| Circuits and group iii-nitride transistors with buried p-layers and controlled … |
2022-3-02 |
2022-11-24 |
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| Wide bandgap semiconductor device with sensor element |
2022-2-25 |
2022-9-22 |
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| Power semiconductor device with reduced strain |
2022-2-16 |
2022-8-25 |
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| Semiconductor power devices having graded lateral doping and methods of forming … |
2022-2-11 |
2022-5-26 |
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| Radio frequency transistor amplifiers having self-aligned double implanted … |
2022-2-11 |
2023-8-17 |
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| Power semiconductor devices having multilayer gate dielectric layers that … |
2022-2-10 |
2022-5-26 |
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| Semiconductor die including a metal stack |
2022-2-04 |
2023-8-10 |
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| Packaged electronic circuits with moisture protection seal and formation method … |
2022-2-03 |
2022-4-12 |
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| Interface layer control methods for semiconductor power devices and … |
2022-2-02 |
2023-6-20 |
2023-6-20 |
| Device packages with uniform components and methods of forming the same |
2022-1-28 |
2022-11-16 |
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| Group iii-nitride high-electron mobility transistors and process for making the … |
2022-1-20 |
2022-8-18 |
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| Laser-assisted method for parting crystalline material |
2022-1-10 |
2022-4-28 |
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| Radio frequency transistor amplifiers having widened and/or asymmetric source/ … |
2022-1-07 |
2023-6-11 |
2023-6-11 |
| Limiting Failures Caused by Dendrite Growth on Semiconductor Chips |
2022-1-03 |
2023-7-06 |
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| Device having a coupled interstage transformer and process implementing the … |
2021-12-23 |
2023-6-29 |
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| Package for power electronics |
2021-12-21 |
2023-9-12 |
2023-9-12 |
| Power semiconductor device with gate trench having ion implanted sidewalls and … |
2021-12-21 |
2023-7-18 |
2023-7-18 |
| Superjunction power silicon carbide semiconductor devices formed via ion … |
2021-12-17 |
2022-3-23 |
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| Group iii-nitride high-electron mobility transistors with a buried conductive … |
2021-12-16 |
2023-6-22 |
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| Large Dimensional Silicon Carbide Monocrystalline Materials with Reduced … |
2021-12-14 |
2023-8-11 |
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| Controlled ion implantation into silicon carbide |
2021-12-14 |
2022-2-22 |
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| Radio frequency transistor amplifiers having engineered intrinsic capacitances … |
2021-12-09 |
2023-5-16 |
2023-5-16 |
| Semiconductor devices for improved measurements and related methods |
2021-12-07 |
2022-6-16 |
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